Model Code (Capacity)1)
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MZ-75E120 (120 GB)
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MZ-75E250 (250 GB)
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MZ-75E500 (500 GB)
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MZ-75E1T0 (1 TB)
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MZ-75E2T0 (2 TB)
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MZ-75E4T0 (4 TB)
General Feature
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APPLICATION
Client PCs
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FORM FACTOR
2.5 inch
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INTERFACE
SATA 6Gb/s
(compatible with SATA 3Gb/s & SATA 1.5Gb/s) -
DIMENSION (WxHxD)
100 X 69.85 X 6.8 (mm)
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WEIGHT
Max 55.0g
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STORAGE MEMORY
Samsung V-NAND
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CONTROLLER
Samsung MGX Controller (120 GB, 250 GB, 500 GB)
Samsung MHX Controller ( 1 TB, 2 TB, 4 TB) -
CACHE MEMORY
256 MB Low Power DDR3 (120 GB)
512 MB Low Power DDR3 (250 GB, 500 GB)
1 GB Low Power DDR3 (1 TB)
2 GB Low Power DDR3 (2 TB)
4 GB Low Power DDR3 (4 TB)
Special Feature
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TRIM SUPPORT
Yes
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S.M.A.R.T SUPPORT
Yes
-
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
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ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
-
WWN SUPPORT
Yes
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DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
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SEQUENTIAL READ
Up to 540 MB/s
-
SEQUENTIAL WRITE
Up to 520 MB/s
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RANDOM READ (4KB, QD32)
120 GB: Up to 94,000 IOPS
250 GB: Up to 97,000 IOPS
500 GB: Up to 98,000 IOPS
1 TB: Up to 98,000 IOPS
2 TB: Up to 98,000 IOPS
4 TB: Up to 98,000 IOPS -
RANDOM WRITE (4KB, QD32)
120 GB: Up to 88,000 IOPS
250 GB: Up to 88,000 IOPS
500 GB: Up to 90,000 IOPS
1 TB: Up to 90,000 IOPS
2 TB: Up to 90,000 IOPS
4 TB: Up to 90,000 IOPS -
RANDOM READ (4KB, QD1)
Up to 10,000 IOPS
-
RANDOM WRITE (4KB, QD1)
Up to 40,000 IOPS
Environment
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AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL)3)120 GB: Average 2.1 W Maximum 2.4 W
250 GB: Average 2.2 W Maximum 2.4 W
500 GB: Average 2.5 W Maximum 3.5 W
1 TB: Average 2.7 W Maximum 4.4 W
2 TB: Average 3.4 W Maximum 5.0 W
4 TB: Average 3.6 W Maximum 5.6 W
(Burst mode) -
POWER CONSUMPTION (IDLE)3)
Max. 50mW
-
ALLOWABLE VOLTAGE
5V ± 5% Allowable voltage
-
RELIABILITY (MTBF)
1.5 Million Hours Reliability
-
OPERATING TEMPERATURE
0 – 70 ℃
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SHOCK
1,500 G & 0.5 ms (Half sine)
Accessories
-
INSTALLATION KIT
N/A
Warranty
-
MZ-75E1T0 (1 TB)
5 Years or 150 TBW
